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| '9 9 n ew ! MICROWAVE CORPORATION HMC132C8 General Description The HMC132C8 is a surface mount, low cost, non-hermetic packaged version of the HMC132G7 MMIC SPDT switch. The device is a fast, broadband SPDT switch featuring high (> 42 dB) isolation over the entire band. The switch is non-reflective at both RF1 and RF2 ports. Applications for this device include T/R switching for 5.2 GHz UNII, 5.8 GHz ISM circuits, WLAN, and S,C and XBand Telecom radios. GaAS MMIC SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Features BANDWIDTH: DC-8 GHz HIGH ISOLATION : > 50 dB NON-REFLECTIVE DESIGN 7 SWITCHES Guaranteed Performance, With 0/-5V control, 50 Ohm System, -55 to +85 deg C Parameter Inser tion Loss Frequency DC - 2 GHz DC - 6 GHz DC - 8 GHz DC - 2 GHz DC - 6 GHz DC - 8 GHz DC - 2 GHz DC - 6 GHz DC - 8 GHz 0.5 - 8 GHz 0.5 - 8 GHz 0.5 - 8 GHz 50 38 36 14 10 8 +20 +22 +38 Min. Typ. 1.4 1.8 2.6 54 45 40 19 14 13 +25 +27 +42 3 6 Max. 1.7 2.2 3.0 Units dB dB dB dB dB dB dB dB dB dB m dB m dB m ns ns Web Site: www.hittite.com SPDT SMT Isolation Return Loss (on state) Input Power for 0.1 dB Compression Input Power for 1dB Compression (0/-5V Ctl) Input Third Order Intercept Switching Characteristics DC - 8 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 7-6 '9 9 HMC132C8 MICROWAVE CORPORATION ne HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 w ! Insertion Loss 0 -1 INSERTION LOSS (dB) Isolation 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 -2 -3 -4 -5 0 2 4 6 FREQUENCY (GHz) 8 10 0 2 4 6 FREQUENCY (GHz) 8 10 Return Loss 0 Output "On" Input 7 SWITCHES 8 10 RETURN LOSS (dB) -10 -30 Output "Off" 0 2 4 6 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7-7 SMT -40 SPDT -20 '9 9 n ew ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Schematic RF COM (PIN 7) Truth Table Control Input A H i gh B Low H i gh Signal Path State RF to RF1 ON OFF RF to RF2 OFF ON RF1 PIN 1) RF2 (PIN 4) Low Do not "HOT" switch power levels > +15 dBm ( Vctl = 0/-5Vdc) A B (PIN 5) (PIN 6) (PINS 2,3,8 and BACKSIDE are GND) Control Voltages State Low H i gh Bias Condition 0 to -0.2V @ 20uA Max. -5V@200uA Typ to -7V@600uA Max Absolute Maximum Ratings Control Voltage Range Storage Temperature Operating Temperature +0.5 to -7.5 Vdc -65 to +175 deg C -55 to +85 deg C 7 SWITCHES Outline 0.197/0.203 (5.00/5.16) PIN 8 CHAMFERED 0.004 (0.10) COPLANARITY MAX. 0.095 (2.41) MAX. 0 DEG. TO 7 DEG. RF GND COM B A 0.282/0.298 (7.16/7.57) SPDT HMC 132C8 RF1 GND GND RF2 0.157/0.163 (3.99/4.14) 0.020/0.040 (0.51/1.02) PIN 1 0.007/0.009 TYP (0.18/0.23) 1. SMT 0.177/0.183 (0.18/0.23) 2. 3. 4. 0.137/0.143 (3.48/3.63) RF GND PLANE COPLANAR WITH LEADS 0.050 TYP (1.27) 0.020 +/- 0.003 TYP (0.51 +/- 0.08) 5. MATERIAL: A) PACKAGE BODY & COVER : WHITE ALUMINA (92%) B) LEADS & PACKAGE BOTTOM: COPPER PLATING : ELECTROLYTIC GOLD 100 - 200 MICROINCHES OVER ELECTROLYTIC NICKEL 100 TO 200 MICROINCHES. DIMENSIONS ARE IN INCHES (MILLIMETERS). UNLESS OTHERWISE SPECIFIED TOL. ARE 0.005(0.13). ALL UNLABELED LEADS ARE GROUND. THESE LEADS ARE CONNECTED INTERNALLY TO THE PACKAGED BOTTOM GROUND. THE PACKAGE BOTTOM RF GROUND MUST BE SOLDERED TO THE PCB RF GROUND. PACKAGE LENGTH AND WIDTH DIMENSIONS SHOWN DO NOT INCLUDE LID SEAL PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.005 (0.127MM) PER SIDE. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7-8 '9 9 HMC132C8 MICROWAVE CORPORATION ne HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 w ! Suggested Driver Circuit for HMC132C8 Vz=5.1V Izt=50uA COMPENSATED DEVICES CD4689 TTL OR CMOS VCC GND VCC GND A GaAs SWITCH CONTROL B 10K 74HCT04 (TTL) 74HC04 (CMOS) -5 VDC Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. 7 SWITCHES 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7-9 SMT SPDT '9 9 n ew ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Evaluation Circuit Board 7 SWITCHES SPDT The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Layout Technique Material Grounded Co-Planar Waveguide (GCPW) Rogers 4350 0.020" (0.51 mm) 0.034" (0.86 mm) 0.010" (0.25 mm) 0.014" (0.36 mm) SMA-F ( EF - Johnson P/N 142-0701-806) SMT Dielectric Thickness 50 Ohm Line Width Gap to Ground Edge Ground VIA Hole Diameter Connectors 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 10 '9 9 HMC132C8 MICROWAVE CORPORATION ne HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 w ! NOTES: 7 SWITCHES 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 11 SMT SPDT |
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